PART |
Description |
Maker |
ISPLSI1032EA-170LT100 ISPLSI1032EA-200LT100 1032EA |
60 MHz in-system prommable high density PLD 170 MHz in-system prommable high density PLD 125 MHz in-system prommable high density PLD 100 MHz in-system prommable high density PLD Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyethylene; Shielding Material:Aluminum Foil/Polyester Tape/Tinned Copper Braid; Number of Pairs:4 RoHS Compliant: Yes In-System Programmable High Density PLD 在系统可编程高密度可编程逻辑器件
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LATTICE[Lattice Semiconductor] Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
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ISPLSI2128VE ISPLSI2128VE-100LB100 ISPLSI2128VE-10 |
3.3V In-System Programmable SuperFAST?High Density PLD CRYSTAL 32.768KHZ 12.5PF SMD 3.3V In-System Programmable SuperFAST?/a> High Density PLD 3.3V In-System Programmable SuperFAST⑩ High Density PLD 3.3V In-System Programmable SuperFAST High Density PLD CRYSTAL 12.0 MHZ 20PF SMD 3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP176 3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PBGA208 3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 6 ns, PBGA208 3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PBGA100 3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PBGA100 3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP160 3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP100 3.3V In-System Programmable SuperFASTHigh Density PLD 3.3在系统可编程超快⑩高密度可编程逻辑器件 3.3VIn-SystemProgrammableSuperFASTHighDensityPLD 3.3V In-System Programmable SuperFAST?/a> High Density PLD
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LATTICE[Lattice Semiconductor] Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
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ATV2500B-15KM/883 ATV2500BL-20KM/883 ATV2500BQL-30 |
High-Speed High-Density UV Erasable Programmable Logic Device OT PLD, 20 ns, PDIP40 High-Speed High-Density UV Erasable Programmable Logic Device UV PLD, 30 ns, CQCC44 High-Speed High-Density UV Erasable Programmable Logic Device UV PLD, 15 ns, CQCC44 High-Speed High-Density UV Erasable Programmable Logic Device UV PLD, 25 ns, CQCC44 High-Speed High-Density UV Erasable Programmable Logic Device OT PLD, 25 ns, PQCC44 High-Speed High-Density UV Erasable Programmable Logic Device UV PLD, 25 ns, CDIP40 High-Speed High-Density UV Erasable Programmable Logic Device OT PLD, 25 ns, PDIP40 ER 4C 4#8 SKT RECP BOX Seals Circular Connector; MIL SPEC:MIL-C-5015 E/F/R; Body Material:Aluminum Alloy; Series:MS3102; No. of Contacts:14; Connector Shell Size:22; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle; Gender:Female RoHS Compliant: No Circular Connector; No. of Contacts:14; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:22; Circular Contact Gender:Pin; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:22-19 RoHS Compliant: No ER 14C 14#16 SKT RECP CONTROL KNOB RoHS Compliant: Yes ER 3C 3#8 SKT RECP BOX ER 7C 7#16 PIN RECP ER 3C 1#16 2#8 PIN RECP BOX ER 9C 9#16 PIN RECP
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Atmel, Corp. Atmel Corp. http:// ATMEL Corporation
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16SVP82M |
OS CON SVP SERIES From old datasheet system
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SANYO
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SD10-100-R SD10-150-R SD10-151-R SD10-1R5-R SD10-4 |
SD Series High Power Density, Low Profile, Shielded Inductors SD Series High Power Density, Low Profile, Shielded Inductors
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Cooper Bussmann, Inc.
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ATL35 |
The ATL35 series ASIC family is fabricated on a 0.35 micron CMOS process with up to four levels of metal. This family features arrays with up to 2.7 million routable gates and 976 pins. The high density and high pin count capabilities of t
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Atmel
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ATV2500H ATV2500H-25DC ATV2500H-25DI ATV2500H-25DM |
120 OHM 1% 1/8 W High-Density UV-Erasable Programmable Logic Device UV PLD, 35 ns, CDIP40 High-Density UV-Erasable Programmable Logic Device OT PLD, 35 ns, PQCC44 High-Density UV-Erasable Programmable Logic Device UV PLD, 35 ns, CQCC44 High-Density UV-Erasable Programmable Logic Device OT PLD, 30 ns, PDIP40 High-Density UV-Erasable Programmable Logic Device UV PLD, 30 ns, CQCC44
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ATMEL[ATMEL Corporation] Atmel Corp. Atmel, Corp.
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ISPLSI2128E-100LT176 ISPLSI2128E-135LT176 ISPLSI21 |
In-SystemProgrammableSuperFASTHighDensityPLD In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP176 In-System Programmable SuperFAST High Density PLD In-System Programmable SuperFAST⑩ High Density PLD In-System Programmable SuperFAST?/a> High Density PLD
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Lattice Semiconductor, Corp. Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor]
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MACH211SP-12 MACH211SP-7JC MACH211SP-7VC MACH211SP |
RES 35.7K-OHM 1% 0.1W 100PPM THICK-FILM SMD-0603 5K/REEL-7IN-PA SCREW MACHINE SLOTTED 6-32X3/4 High-Density EE CMOS Programmable Logic EE PLD, 16 ns, PQCC44 High-Density EE CMOS Programmable Logic 高密度电子工程CMOS可编程逻辑
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Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
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ISPLSI2192VE100LB144 ISPLSI2192VE100LB144I ISPLSI2 |
3.3V In-System Programmable SuperFAST?High Density PLD 3.3V In-System Programmable SuperFAST?/a> High Density PLD 3.3V In-System Programmable SuperFAST High Density PLD 3.3V In-System Programmable SuperFAST垄芒 High Density PLD 3.3V In-System Programmable SuperFAST⑩ High Density PLD EE PLD, 13 ns, PQFP128
|
LATTICE SEMICONDUCTOR CORP
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ISPLSI2032A-110LT48I ISPLSI2032A-135LJI ISPLSI2032 |
In-System Programmable High Density PLD EE PLD, 8 ns, PQFP44 In-System Programmable High Density PLD 在系统可编程高密度可编程逻辑器件 In-System Programmable High Density PLD EE PLD, 10 ns, PQCC44 In-System Programmable High Density PLD EE PLD, 10 ns, PQFP48 In-System Programmable High Density PLD EE PLD, 7.5 ns, PQFP44
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Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
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SDHD7.5K SDHP7.5K SDHP15K SDHD15K SDHN7.5K |
STANDARD RECOVERY HIGH VOLTAGE DOUBLER AND CENTER TAPS High Density,High Voltage,Standard Recovery Doubler Rectifier(反向电压7500V,温5℃时平均整流电流0.4A,高密高电标准恢复倍增整流 High Density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V,温5℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器) High Density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V,温25℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器) 0.8 A, 7500 V, 2 ELEMENT, SILICON, SIGNAL DIODE High Density,High Voltage,Standard Recovery Doubler Rectifier(反向电压15000V,温25℃时平均整流电流0.4A,高密高电标准恢复倍增整流 高密度,高电压,标准恢复倍流整流(反向电5000V,温25℃时平均整流电流0.4A,高密度,高电压,标准恢复倍增整流器)
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Semtech Corporation Semtech, Corp.
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